TC1606 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 1 / 4 2w high linearity and high efficiency gaas power fets features 2w typical power at 6 ghz photo enlargement linear power gain: g l = 12 db typical at 6 ghz high linearity: ip3 = 43 dbm typical at 6 ghz via hole source ground suitable for high reliability application breakdown voltage: bv dgo 18 v lg = 0.6 m, wg = 5 mm high power added efficiency: nominal pae of 43 % at 6 ghz tight vp ranges control high rf input power handling capability 100 % dc tested description the TC1606 is a gaas pseudomorphic high electron mobility transistor (phemt) which has high linearity and high power added efficiency. the device is processed with a propriety via-hole process, which provides low thermal resistance and low inductance. the long gate length makes the device to have high breakdown voltage. all devices are 100% dc tested to assure consistent quality. bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. backside gold plating is compatible with standard ausn die-attach. typical application include commercial and military high performance power amplifiers electrical specifications (t a =25 c) symbol conditions min typ max unit p 1db output power at 1db gain compression point , f = 6 ghz v ds = 8 v, i ds = 500 ma 32.5 33 dbm g l linear power gain, f = 6 ghz v ds = 8 v, i ds = 500 ma 11 12 db ip3 intercept point of the 3 rd -order intermodulation, f = 6 ghz v ds = 8 v, i ds = 500 ma,*p scl = 20 dbm 43 dbm pae power added efficiency at 1db compression power, f = 6 ghz 43 % i dss saturated drain-source current at v ds = 2 v, v gs = 0 v 1.2 a g m transconductance at v ds = 2 v, v gs = 0 v 850 ms v p pinch-off voltage at v ds = 2 v, i d = 10 ma -1.7** vo l t s bv dgo drain-gate breakdown voltage at i dgo = 2.5 ma 18 22 vo l t s r th thermal resistance 6 c/w note: * p scl : output power of single carrier level. * *for the tight control of the pinch-off voltage . TC1606?s are divided into 3 groups: (1) TC1606p1519 : vp = -1.5v to -1.9v (2) TC1606p1620 : vp = -1.6v to -2.0v (3) TC1606p1721 : vp = -1.7v to -2.1v in addition, the customers may specify their requirements.
TC1606 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 2 / 4 absolute maximum ratings (t a =25 c) symbol parameter rating v ds drain-source voltage 12 v v gs gate-source voltage -5 v i ds drain current i dss p in rf input power, cw 30 dbm p t continuous dissipation 7.7 w t ch channel temperature 175 c t stg storage temperature - 65 c to +175 c chip dimensions units: micrometers chip thickness: 50 gate pad: 76 x 59.5 drain pad: 86.0 x 76.0 g g d d 1060 12 g g d d 470 12
TC1606 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 3 / 4 typical scattering parameters (t a =25 c ) v ds = 8 v, i ds = 500 ma frequency s11 s21 s12 s22 (ghz) mag ang mag ang mag ang mag ang 2 0.9431 -167.86 3.3354 82.58 0.0227 5.17 0.5586 -167.33 3 0.9438 -172.26 2.1882 74.07 0.0222 3.12 0.5845 -165.78 4 0.9450 -174.61 1.6019 66.85 0.0215 2.57 0.6143 -164.36 5 0.9464 -176.14 1.2440 60.39 0.0206 3.02 0.6460 -163.42 6 0.9479 -177.28 1.0025 54.50 0.0198 4.33 0.6775 -162.98 7 0.9494 -178.19 0.8290 49.13 0.0190 6.46 0.7075 -162.94 8 0.9508 -178.96 0.6987 44.21 0.0183 9.33 0.7352 -163.19 9 0.9522 -179.65 0.5980 39.72 0.0177 12.85 0.7602 -163.63 10 0.9534 179.72 0.5182 35.61 0.0173 16.87 0.7825 -164.21 11 0.9546 179.13 0.4539 31.86 0.0171 21.23 0.8023 -164.86 12 0.9556 178.58 0.4013 28.44 0.0171 25.73 0.8198 -165.55 13 0.9565 178.06 0.3576 25.31 0.0173 30.21 0.8351 -166.25 14 0.9573 177.55 0.3210 22.46 0.0177 34.51 0.8486 -166.95 15 0.9581 177.06 0.2901 19.86 0.0183 38.53 0.8604 -167.64 16 0.9587 176.59 0.2636 17.48 0.0189 42.20 0.8709 -168.30 17 0.9593 176.13 0.2408 15.32 0.0197 45.51 0.8801 -168.95 18 0.9598 175.67 0.2210 13.35 0.0206 48.46 0.8882 -169.57 * the data does not include gate and drain bond wires. 0 1.0 1.0 -1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 swp max 18ghz swp min 2ghz s11 0 15 30 45 60 75 90 105 120 135 150 165 -180 -165 -150 -135 -120 -105 -90 -75 -60 -45 -30 -15 swp max 18 ghz swp min 2 ghz mag max 0.025 0.0125 per div s12 0 15 30 45 60 75 90 105 120 135 150 165 -180 -165 -150 -135 -120 -105 -90 -75 -60 -45 -30 -15 swp max 18 ghz swp min 2 ghz mag max 4 1 per div s21 0 1.0 1.0 -1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 swp max 18ghz swp min 2ghz s22
TC1606 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 4 / 4 small signal model, v ds = 8 v, i ds = 500 ma schemati cgs cgd cds rg rd rds ri rs gm t lg ld ls parameters lg 0.0196 nh rs 0.197 ohm rg 0.225 ohm ls 0.005 nh cgs 8.87 pf cds 1.073 pf ri 0.455 ohm rds 31.85 ohm cgd 0.361 pf rd 0.315 ohm gm 880.6 ms ld 0.004 nh t 3.9 psec chip handling die attachment: conductive epoxy or eutectic die attach is recommended. eutectic die attach can be accomplished with au-sn (80%au-20%sn) perform at stage temperature: 290 c 5 c; handling tool: tweezers; time: less than 1min. wire bonding: the recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. stage temperature: 220 c to 250 c; bond tip temperature: 150 c; bond force: 20 to 30 gms depending on size of wire and bond tip temperature. handling precautions: the user must operate in a clean, dry environment. care should be exercised during handling avoid damage to the devices. electrostatic discharge (esd) precautions should be observed at all stages of storage, handling, assembly, and testing. the static discharge must be less than 300v.
|
